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SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type Case : ITO-3P ( FP5W90HVX2 ) 900V 5A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input High voltage power supply Inverter (Unit : mm) 2SK2673 OUTLINE DIMENSIONS RATINGS Absolute Maximum Ratings iTc = 25j Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain CurrentiDCj ID IDP Continuous Drain CurrentiPeak) IS Continuous Source CurrentiDCj PT Total Power Dissipation IAR Repetitive Avalanche Current Single Avalanche Energy EAS Repetitive Avalanche Energy EAR Vdis Dielectric Strength TOR Mounting Torque Conditions Ratings -55150 150 900 }30 5 10 5 50 5 100 10 2 0.8 Unit V A W A mJ kV Nm Pulse width10Es, Duty cycle1/100 Tch = 150 Tch = 25 Tch = 25 Terminals to case,@AC 1 minute i Recommended torque F0.5 Nm j Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd. HVX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tran]conductance Static Drain-Source On-]tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage AEjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions 2SK2673 ( FP5W90HVX2 ) Min. 900 2. 4 2. 5 Typ. Max. 250 }0. 1 2. 8 3. 5 1. 5 2. 5 Unit V EA S V /L nC pF 100 350 ns ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = }30V, VDS = 0V ID = 2. 5A, VDS = 10V ID = 2.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 2.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 5A VDS = 25V, VGS = 0V, f = 1MHZ ID = 2. 5A, RL = 60, VGS = 10V 4. 0 2. 1 3. 0 45 1140 23 105 55 210 Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd. 2SK2673 10 Tc = -55C Transfer Characteristics 25C 8 Drain Current ID [A] 6 100C 150C 4 2 VDS = 25V TYP 0 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2673 100 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 ID = 2.5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2673 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2673 10 Safe Operating Area 100s 200s 1 Drain Current ID [A] R DS(ON) limit 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2673 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-4 10-2 10-3 10-1 100 101 102 Time t [s] 2SK2673 100 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 80 60 40 20 0 0 50 100 150 Starting Channel Temperature Tch [C] 2SK2673 10000 Capacitance Ciss 1000 Capacitance Ciss Coss Crss [pF] 100 Coss Crss 10 f=1MHz Ta=25C TYP 1 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2673 Single Avalanche Current - Inductive Load VDD = 100V VGS = 15V 0V Rg = 60 IAS = 5A 10 Single Avalanche Current IAS [A] EAR = 10mJ EAS = 100mJ 1 0.1 1 10 100 Inductance L [mH] 2SK2673 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2673 500 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] VDD = 400V 200V 300 100V VGS 15 10 200 5 100 ID = 5A TYP 0 0 20 40 60 80 0 100 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 |
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